Design and control of interface reaction between Al-based dielectrics and AlGaN Layer in AlGaN/GaN metal-oxide-semiconductor structures

Watanabe, Kenta*; Nozaki, Mikito*; Yamada, Takahiro*; Nakazawa, Satoshi*; Anda, Yoshiharu*; Ishida, Masahiro*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; et al.

Applied Physics Letters, 111(4), p.042102_1 - 042102_5, 2017/07

https://doi.org/10.1063/1.4986419

AlGaN/GaN HFET (hetero-junction field-effect transitor) has gained much attention as next-generation high frequency and high power devices. In this study, we systematically investigated the interface reaction between Al-based dielectrics (AlO and AlON) and AlGaN layer during deposition and post-deposition annealing (PDA), and revealed high thermal stability of AlON/AlGaN interface.